CDI
The CDI system was developed in cooperation with the Fraunhofer ISE research institute. It is a system for fast spatially resolved lifetime measurement of silicon wafers up to a size of 156x156 mm (modell CDI 156) or 210x210 mm (Modell CDI 210). Carrier density is an important parameter to measure the power of cristallin solar cells and panels.
It is based on the principle of emission of infrared radiation by free carriers. A high speed infrared camera (3-5 μm spectral range) with high resolution is applied for measuring the infrared emission from the sample. This overcomes the necessity of scanning the sample in order to receive laterally resolved information. Measurement times can be cut in this setup from hours to minutes or even seconds. An additional advantage is the absence of any moving parts which may cause spatial errors or even failures in the measurement. The use of lock-in technique and an appropriate source of homogeneous large area laser beam illumination is essential to receive good results on low quality materials.
Technical Specification
- Fast, high precision IR camera with high resolution
- Homogeneous laser beam irradiation on large area
- Laser proof housing with security locked doors
- Cell size up to 156x156 mm (modell CDI 156) or up to 210x210 mm (Modell CDI 210)
- Non-destructive and contactless measurement
- Fast measurement time down to a few minutes or even seconds
- CDI, ILIT and SRI also available in combination as IR-Multitool 210
